Samsung Corporation has unveiled a series of upcoming enhancements in manufacturing technologies aimed at attracting AI chip creators.
The company offers an improved processor development process using back-side power delivery technology, where power rails are placed on the opposite side of the silicon wafer. According to company representatives, this approach increases power and performance while reducing voltage drop compared to the first-generation 2nm process.
With these innovations, the South Korean firm plans to increase orders for semiconductor manufacturing for AI chips.
Samsung also discussed its key technology for AI products, the Gate-all-around (GAA) channel surrounding technology. This process allows for better control of transistor switching. The corporation plans to begin mass production using the second-generation 3nm process in the second half of 2024 and to implement GAA in the upcoming 2nm process.
The company confirmed work on 1.4nm chips, with production set to commence in 2027.
According to Bloomberg, Samsung will merge two North American AI research centers and hire a former Apple executive to lead the new venture.
Sources indicate that the company is creating a new unified North America AI Center to enhance operations and improve team efficiency. It will include staff from Toronto, Canada, and California, USA, and will be led by Murat Akcakaya, who was responsible for Siri’s development at Apple, the publication claims.
Earlier, Samsung banned employees from using generative AI tools like ChatGPT due to concerns over potential leaks of confidential data.